Please use this identifier to cite or link to this item: 192.168.6.56/handle/123456789/33761
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dc.contributor.authorMaiti, C K-
dc.contributor.authorChattopadhyay, S-
dc.date.accessioned2019-01-03T12:53:57Z-
dc.date.available2019-01-03T12:53:57Z-
dc.date.issued2007-
dc.identifier.isbn978-0-7503-0993-6-
dc.identifier.isbn438en_US
dc.identifier.urihttp://10.6.20.12:80/handle/123456789/33761-
dc.language.isoenen_US
dc.publisherTaylor & Francis Group, LLCen_US
dc.subjectMetal oxide semiconductoren_US
dc.subjectfield-effect transistors.en_US
dc.titleSeries in Materials Science and Engineering Strained-Si Heterostructure Field Effect Devicesen_US
dc.typeBooken_US
Appears in Collections:Mechanical Engineering

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